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An InGaAs/InAlAs/InP HEMT with sub-50nm EBL gate has been developed for sub-millimeter wave (SMMW) power amplifier (PA) applications. In this paper, we report the device performance including high drain current, high gain, high breakdown voltage and scalability to large gate periphery, which are essential for achieving high output power at these frequencies. Excellent yield, process uniformity and...
In response to the continually increasing appetite for bandwidth, most transistor technologies have recently made great strides towards higher cutoff frequencies: Silicon MOSFETs, SiGe HBTs, InP-based HEMTs and a variety of InP -based HBTs all show cutoff frequencies fT and/or fMAX exceeding 300 GHz, and in some cases approaching 800 GHz. Proponents of various technologies have stated that the development...
Maximizing In composition in the channel structures of high-electron-mobility transistors on InP is one important aspect of achieving devices capable of operating beyond 300 GHz. In this article, we compare dc and rf performance results from two variations of one such device design, incorporating a composite-channel structure comprised of InAs clad by InP-lattice-matched InGaAs. The only difference...
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