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Non‐volatile memory cells using Co‐doped BaTiO3 as an active layer exhibit high‐performance unipolar resistive switching characteristics, with a resistance ratio over 104, retention time longer than 7 × 104 s, endurance over 105 cycles, and switching speed less than 10 ns/70 ns for SET/RESET. Under high electric field and large Joule heating, the easily varied valence of Co ions, the pre‐existing...
The crystalline properties of sol-gel derived lead-based ferroelectric thin films on several kinds of substrates were investigated. The polycrystalline lead zirconium titanate (PZT), lead lanthanum titanate (PLT) and PbTiO 3 ferroelectric thin films, the highly oriented PbTiO 3 ferroelectric thin films and the epitaxial growth PZT, PLT ferroelectric thin films with perovskite-type...
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