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For the analytical description of doping profiles after ion implantation, good multilayer models are required to describe the implantation through thin layers, e.g. a scattering oxide or non-vertical mask edges. In this paper, benefits and drawbacks of some published models are discussed, and an improvement is suggested. Comparisons with results from Monte Carlo simulations and SIMS measurements are...
For the measurement of dopant concentrations in two dimensions (2d), a delineation technique has been optimized. The method yields up to three dopant equiconcentration lines in one sample. The concentrations of these lines can be changed by modification of the etching conditions. This technique is applied to the investigation of 2d ion implantation profiles.
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