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The influence of temperature variations during flash annealing on contact resistances in 6-T SRAM cells was studied. TCAD simulations of 32 nm single gate FD SOI devices were carried out. The active regions of a 6-T SRAM cell were simulated by 3D process simulations to calculate the Schottky contact resistances. A coupled spike and flash annealing scheme was used to anneal the devices. Flash annealing...
In this paper, an approach is presented which is suitable for predicting the shape of copper layers deposited by low-pressure chemical vapor deposition (LPCVD) on three-dimensional (3D) features as used in semiconductor technology. The 3D simulations are based on a physical model assuming reactive molecules arriving at the substrate. These molecules react with a certain probability, the so-called...
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