The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Traditional approaches for fixed-point characterization are based on long simulations or additive noise models that do not show the nonlinear behavior of the quantization operations in reasonable time. In this paper, a novel interval-based approach that provides both tighter and faster results than the existing approaches is presented. It is based on a nonlinear adaptation of the quantization operations...
Electron transport properties of strained-Si on relaxed Si1-xGex channel MOSFETs have been studied using a Monte Carlo simulator. The steady- and non-steady-state high-longitudinal field transport regimes have been described in detail. Electron-velocity-overshoot effects are also studied in deep-submicron strained-Si MOSFETs, where they show an improvement over the performance of their normal silicon...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.