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We present two wideband reconfigurable LNA hybrid circuits realized using ohmic contact and capacitive RF-MEMS SPDT switch networks made on GaAs and quartz substrates, respectively. The wideband GaAs MEMS SPDT switch circuit used presents a loss of less than 1.0 dB and isolation higher than 15 dB from DC up to 34 GHz and the capacitive MEMS SPDT switch circuit has 0.9 dB of in-band loss and 8 dB of...
In this paper, we present small and large signal data of a switched LNA hybrid circuit implemented using a low-loss and high linearity RF MEMS switching network on a GaAs MMIC wafer. The GaAs MEMS based reconfigurable LNA front-end circuit can achieve a 30 dB difference in in-band gain and attenuation (when the switch is turned on and off) while also being able to maintain a high gain (low noise figure)...
This article describes the progress made during the first project year of the FP7 EU-project MEMS-4-MMIC that focuses on the merging of innovative RF-MEMS switch designs with established MMIC-technology. The ultimate goal is to include RF-MEMS switches into a standard commercial foundry process. Such switches will then become standard building blocks for MMIC circuits such as transistors, resistors...
In this paper, we report on recent results obtained within a pan-European research effort aiming at a successful integration of RF MEMS switches in a GaAs MMIC foundry process technology. Testing and characterization of GaAs based MEMS switches and RF circuits show promising results with respect to switch cycling tests, micro-seconds switching times and the relatively low losses demonstrated up to...
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