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We use Ion Beam Proximity Lithography (IBPL) to produce 4 mm times 4 mm arrays of 220 nm dots in perpendicularly - oriented Co/Pd multilayered media. IBPL is used to reduce the size distribution sigmaD of the arrays, and subsequently He+ ion irradiation is used to reduce their anisotropy. The switching field distribution sigmaHcr/HCr is measured for each sample before and after irradiation, and a...
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