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This work addresses the study of active edge n-in-p planar sensors. Active edge planar pixel sensors are promising candidates to instrument the inner layers of the new ATLAS pixel detector for High Luminosity Large Hadron Collider (HL-LHC), thanks to its radiation tolerant properties and the increased fraction of active area due to a distance as low as 50 μm between the last pixel implants and the...
A physics-based device simulation was used to study the charge carrier distribution and the electric field configuration inside simplified two-dimensional models for pixel layouts based on the ATLAS pixel sensor. In order to study the behavior of such detectors under different levels of irradiation, a three-level defect model was implemented into the simulation. Using these models, the number of guard...
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