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DLTS analysis of radiation-induced defects in p-type GaInNAs and GaNAs solar cell structures are presented. The DLTS spectra of GaInNAs indicates one dominant electron emitting trap E1 (0.30 eV) and three-hole emitting traps H1 (0.27 eV), H2 (0.33 eV) and H3 (0.67 eV). Also, one dominant electron emitting trap E2 (0.20 eV) and two-hole emitting traps H4 (0.28 eV) and H5 (0.60 eV) were observed in...
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