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Staggered tunnel junction (GaAs0.35Sb0.65/In0.7Ga0.3As) is used to demonstrate heterojunction tunnel FET (TFET) with the highest drive current, Ion, of 135µA/µm and highest Ion/Ioff ratio of 2.7×104 (Vds=0.5V, Von−Voff=1.5V). Effective oxide thickness (EOT) scaling (using Al2O3/HfO2 bilayer gate stack) coupled with pulsed I–V measurements (suppressing Dit response) enable demonstration of steeper...
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