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A self-rectifying bistable resistor named SR-biristor with capacitor-like MIM structure is presented for selector free, high density, low cost memory application. Stable hysteric I–V characteristics are utilized for data storage. The device exhibits following outstanding advantages: 1. Simple device structure with MIM configuration; 2. CMOS compatible processes and materials; 3. Self-rectifying and...
Scaling is a key issue for resistive switching (RS) memory before commercialization. In this paper, for the first time, we reveal the impact of electrode diffusion on the device performance as the thickness of RS material scaling. Serious deterioration of on/off ratio and device yield was observed when the material scaled below 3 nm. A new method of two-step electrode deposition accompanied with re-oxidization...
Graphene, the basic building block of all graphitic materials has received significant scientific interest due to its ultra-high surface area (>2,630 m2/g), high charge carrier mobility, high thermal conductivity, etc. In particular, graphenes high surface area and excellent electrical conductivity has made it a leading candidate for next generation electrode material in energy storage devices...
This paper discusses combining focused ion beam (FIB) circuit edit with OBIRH technology. FIB can cut or rewire an integrated circuit. OBIRCH can locate failure location. If FIB circuit edit & OBIRCH were applied at the same time, we can locate the failure site and find the root cause of the failure. The paper share one case of failure analysis and present advanced FIB technology.
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