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Shallow junctions formed on thin Ge-on-Si heterostructures are characterized in this paper. The reverse leakage current showed a strong dependence on the Ge thickness, which is believed to be due to the different activation temperature of ions implanted in the Ge layers and in the Si substrates. Ge pMOSFETs fabricated on thin Ge layers showed more significant improvement in short channel effects (SCEs)...
The authors report on the novel MOSFETs that were fabricated on thin relaxed Ge epitaxial layers grown on Si substrates. With controlled epi-Ge thickness, selectively activated shallow source/drain (S/D) junctions are formed using low dopant activation energy of Ge. The Ge epitaxial layers determine the effective S/D junction depth by selectively activating S/D implantations only in the Ge layers,...
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