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We report a 110 nm InP/In0.53Gao.47As/InP double heterojunction bipolar transistor (DHBT) demonstrating a simultaneous ft/fmax 465/660 GHz and operating at power densities in excess of 50 mW/μm2. To our knowledge this is the smallest junction width reported for a III-V DHBT. The narrow 110 nm emitter junction permits the devices to be biased simultaneously at high voltages and high current densities...
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