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Abstract-We report an InPZIn0.53Ga0.47As/InP double heterojunction bipolar transistor (DHBT) demonstrating simultaneous 430-GHz fτ and 800-GHz fmax. The devices were fabricated using a triple mesa process with dry-etched refractory metals for emitter contact formation. The devices incorporate a 30-nm-thick InP emitter semiconductor which enables a wet-etch emitter process demonstrating 270-nm-wide...
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