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Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) is a leading candidate for embedded memory applications, with promises of low power, high performance, and non-volatility.
Spin Transfer Torque Magnetic Random Access Memories (STT-MRAM) are based on Magnetic Tunnel Junctions (MTJs) made out of two ferromagnetic electrodes separated by a MgO tunnel barrier.
A highly efficient spin-polarized electron source is a key element for spintronic devices. One Co-based Heusler alloy in particular, Co2MnSi (CMS), has attracted much interest [1-5] because of its theoretically predicted half-metallic nature and high Curie temperature of 985 K. To fully exploit the half-metallic character of CMS, the effect of defects associated with off-stoichiometry on its half-metallicity...
A Heusler alloy Co2MnSi (CMS) has been extensively studied as a promising spin source material [1,2] because of its theoretically predicted half-metallicity and high Currie temperature of 985 K. We recently demonstrated that the suppression of Co antisites at nominal Mn/Fe sites is critical to obtaining half-metallic quaternary Co2(Mn, Fe)Si (CMFS) [3] in a similar way as in ternary alloy CMS [1,4,5]...
The recent rise of mobile applications such as Internet of Things (IoT), wearable electronics, and context aware computing has renewed the search for a universal embedded memory technology [1]. Such a technology should combine fast read/write, low voltage operation, low power consumption, non-volatility, infinite endurance, with CMOS process compatibility. Magnetic Random Access Memory based on Spin...
Spin torque random access memory (ST-MRAM) design spaces down to CMOS 22 nm technology node are explored using a dynamic magnetic tunneling junction (MTJ)-CMOS model. The coupled dynamics of MTJ and CMOS is modeled by a combination of MTJ micromagnetic simulation and CMOS SPICE circuit simulation. The paper analyzes trade-offs between MTJ current threshold, MTJ thermal stability and CMOS driving strength...
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