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A decrease in ideality factor of GaAs solar cells due to irradiation with 1MeV electron radiation resulted in decreased open circuit voltage and maximum power. Dark current-voltage measurements suggest that 1 MeV electron radiation primarily affects dark current produced at voltages greater than 0.5 V. The dark saturation current of irradiated solar cells increased but a simultaneous decrease in ideality...
In this paper, an H-plane horn antenna is designed and studied in substrate integrated waveguide (SIW) structures. The SIW horn input reflection coefficient and output radiation at 60 GHz have been simulated for a GaAs substrate of 100 um and 300 um thick, respectively. Microstrip line to SIW transition is also designed for possibly realization of the antenna into commercial GaAs MMIC circuit board.
High-power photo conductive semiconductor switches with a gap of 12 mm were fabricated from semi-insulating GaAs, in which carbon acceptor impurity was compensated by deep EL2 donor defect, resulting in very large dark resistivity. Triggered by laser pulse with different optical energy at wavelength of 1064 nm and 532 nm, photoconductivity tests of the PCSS at different bias voltage are underway....
Photoconductive semiconductor switches (PCSSs) are considered as promising device s for high power applications. Since picosecond optoelectronic switching in silicon was published in 1975, especially from 1977, in which Si was replaced by GaAs, PCSSs have been significantly used in pulsed power technology, such as high-power ultra wideband microwave source and compact pulsed power generator. Since...
In order to generate ultrafast electrical pulse by using photoconductive semiconductor switch (PCSS), a switch with a gap of 14 mm was fabricated from semi-insulating GaAs. Illuminated by laser pulse at wavelength of 1064 nm and 532 nm, photoconductivity tests of the PCSS were performed at different bias voltages. Preliminary experimental results suggest that the rise time of the current through the...
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