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Tri-gate bulk MOSFETs are realized using a simple shallow-trench-isolation (STI) oxide recess approach. The tri-gate structure together with a retrograde body doping profile provides for superior electrostatic integrity, particularly for narrow fin widths, to reduce variability in transistor performance. The benefits of tri-gate bulk MOSFET technology for 28 nm-node 6-T SRAM cells (0.149 um2 bit-cell...
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