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Spin orbit interactions give rise to interesting physics phenomena in solid state materials such as the spin Hall effect (SHE) and topological insulator surface states. Those effects have been extensively studied using various electrical detection methods. However, to date most experiments focus only on characterizing electrons near the Fermi surface, while spin-orbit interaction is expected to be...
Spin Transfer Torque Magnetic Random Access Memory (MRAM) possesses a unique combination of high speed, high endurance, non-volatility, and small cell size. Among the emerging new memory technologies, including phase change memory, resistive random access memory, and conductive bridging random access memory, Spin Transfer Torque MRAM is the only candidate with the potential for unlimited endurance,...
The proliferation of distributed generators (DGs) has altered a distribution network from a passive system to an active one. Therefore, power flow originally developed for the passive distribution system needs to account for a DG unit, which can operate either in PV or PQ control mode. Nevertheless, modifications previously proposed can only handle a limited number of PV buses. This paper presents...
MIS capacitors with a high-κ HfLaON or HfLaO gate dielectric are fabricated by using a reactive sputtering method to investigate the applicability of the films as a novel charge-storage layer in a metal-oxide-nitride-oxide-silicon nonvolatile memory device. Experimental results indicate that the MIS capacitor with a HfLaON gate dielectric exhibits a large memory window, high program/erase speed, excellent...
A direct bit transistor access (DBTA) scheme is proposed and implemented in 8 Mb SRAMpsilas at 65 nm and 45 nm nodes. It allows, for the first time, characterization of each bit transistor in a functional SRAM. It thus enables (a) collection of transistor data across bit arrays, (b) collection of massive data for statistical analysis such as on transistor mismatch and NBTI Vt drift, and (c) collection...
This paper presents two low voltage ac-dc difference measurement systems established at SPRING Singapore. The systems use micropotentiometers and resistive divider to scale the voltage from primary reference level to 1 mV to provide accurate mV-level ac-dc difference calibration at frequency range from 10 Hz to 1 MHz. The measurement results of the two systems and the loading effect correction are...
This paper presents two techniques to determine the ratios of resistive dc voltage dividers up to 1 kV. The techniques are based on absolute calibration methods. The set-up requires equipment commonly available in most standard laboratory and is capable of providing high accuracy calibration under practical laboratory working conditions
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