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Hot carrier reliability of a nanowire Omega-FinFET is investigated for the first time. Hot holes injected into the gate oxide via hot-carrier injection (HCI) at the silicon (Si) - silicon dioxide (SiO2) interface of Omega-FinFETs results in the formation of dangling silicon bonds due to the breaking of silicon-hydrogen bonds and lead to high interface traps generation. The trapping and/or bond breaking...
Energy transport in nanostructures differs significantly from macrostructures because of classical and quantum size effects on energy carriers. Thermal conductivity of nanostructures is significantly lower than that of their bulk constituent materials. Based on the concept of thermal conductivity, a simulation study is used to demonstrate the nature of heat transfer in Si nanowires (NWs) in this paper.
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