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This paper presents a theoretical investigation on a THz pulse shaping method based on difference frequency generation of two orthogonally polarized optical pulses. This scheme is effective in controlling the amplitude and polarization of generated THz pulse. The power spectrum from ZnTe, GaAs and GaP crystals is compared when considering crystal absorption and phase mismatching condition. Simulation...
In this work, a modified GA, including search-space separation strategy and local-minima-convergence prevention process, is developed to extract the significant FoMs for the feasible QW lasers and LNAs in future new integrated systems. The multi-parameter extraction strategy is dependent on succinctly associating the analytic equation with the global numerical analysis. Results are demonstrated on...
Till now, quantized Hall devices distributed by the BIPM are used in NIM's quantized Hall resistance standard. In this paper, we report the preliminary results of quantized Hall devices with GaAs-AlGaAs heterostructures fabricated by ourselves. The device is with AuGeNi contacts for reliability consideration, but the contacts are with relatively large resistances for layer contents and annealing condition...
Ohmic contacts to 2DEG are crucial in quantized Hall resistance device fabrication. Magnetic property of the commonly used Au/Ge/Ni recipe for ohmic contact to 2DEG in a GaAs/AlGaAs heterostructure is studied in this summary paper.
A low-dark-current high-speed InGaAs PIN photodiode suitable for optoelectronic monolithic integration has been fabricated by LPE method on semi-insulating InP substrate. The photodiode has the lowest reported dark-current density of 2.5 ? 10?6 A/cm2 at ?10 V in this material system. At the operating voltage of ?5 V, an external quantum efficiency of >90% at 1.3 ?m and >83% at 1.55 ?m, a rise...
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