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The lateral growth of GeSn strips on Si(111) has been successfully achieved by Sn self-catalyzed MBE method. The effect of Sn catalysts on morphology and the quality of the materials were studied. The high quality GeSn on Si will contribute to development of Si-based optoelectronics.
Recently, flexible electronic devices have attracted increasing interest, due to the opportunities they promise for new applications such as wearable devices, where the components are required to flex during normal use[1]. In this light, different magnetic sensors, like microcoil, spin valve, giant magnetoresistance (GMR), magnetoimpedance (MI), have been studied previously on flexible substrates.
A narrow-size planar monopole antenna for triple-band operation is presented. The proposed antenna consists of a half E-shaped metal patch, a 50 ohm coplanar waveguide (CPW) transmission line and a branch extended from the ground. The narrowness of the antenna is achieved by applying the asymmetric coplanar strip (ACS) structure to the prototype one. The multiband characteristic of the antenna is...
Low-temperature reflow anneals of physical-vapor-deposited (PVD) Cu on Ru are achieved at a Cu/low-k integration-compatible low temperature of 250°C by surface diffusion. Feature-fill capability is also demonstrated in patterned features along with reasonable electrical measurements. As compared to typical impurity levels in the conventional electroplated Cu, the reflowed PVD Cu had higher purity,...
Summary form only given. Large scale SiC/SiO2 nanowires have been synthesized on Si (100) by the reaction of methane with silica using iron as catalyst. The growth time was 10 mins and the growth temperature was around 1,250°C in a normal atmospheric pressure. Detailed investigation with scanning electron microscopy (SEM), energy-dispersed X-ray (EDX), X-ray diffraction (XRD) and transmission electron...
The effects of growth conditions on the morphology of ZnO nanostructures grown by CVD process with Au catalyst were systemically studied and the key factors controlling growth were identified. Two growth modes of ZnO formation were observed: self-catalyzed growth on Si substrate and gas-phase nucleation and growth. In the former case, the ZnO nanostructures grow by the vapor-solid mechanism and the...
We report on the development of coplanar contact pattern for the RF-characterisation of nanoscaled devices. A contact layout exhibiting a low parasitic capacitance is developed using electrostatic field theory calculations. The improved pad- and coupling capacitance has been experimentally verified based on scattering parameter measurements and small signal parameter extraction of a single nanowire...
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