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In this study, we proposed the low temperature (150 °C) oxygen (O 2 ) and ozone (O 3 ) treatments with a high pressure of 68 atm to improve the quality of sputtered hafnium-oxide (HfO x ) thin-film dielectric. XPS results indicate that the binding energy of Hf-O became stronger and traps in dielectric film could be effectively passivated after the O 2 and O 3 ...
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