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This letter investigates the effect of negative bias stress induced abnormal degradation in amorphous InGaZnO thin-film transistors (TFTs) at high temperature. Drain current-gate voltage (ID-VG) and capacitance-voltage (C-V) measurements are employed to analyze degradation mechanism. High temperature negative bias stress lead to not only a negative parallel shift in ID-VG but also a C-V distortion...
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