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InGaAs/InGaAsP/InP avalanche photodiodes with separate absorption, `grading? and multiplication regions (SAGMAPDs) have been fabricated for the first tune from wafers grown by metalorganic chemical vapour deposition (MOCVD) These APDs exhibit low dark current (? 32 nA at 90% breakdown) and high-speed pulse response (? 100 ps FWHM).
Planar InGaAs/InP heterostructure PIN photodiodes have been fabricated from structures grown by atmospheric-pressure metalorganic chemical vapour deposition. Diffused p-n junction devices of 75 ?m diameter have low dark currents (~10 nA at ?10 V), good quantum efficiencies (~50% without AR coatings) and response times less than 40 ps.
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