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Recently, several applications that benefit from single photon detection have emerged. One area that appears promising is ultra-secure. Key performance parameters for this emerging technology are high single photon detection efficiencies, low dark count rates, and low after pulsing. This paper reviews some of the recent advances that have been achieved in single photon counting avalanche photodiodes.
We report 4H-SiC p-i-n avalanche photodiodes (APDs) with very low dark current. When biased for a photocurrent gain M of 1000, a 100-mum-diameter device exhibits dark current of 5 pA (63 nA/cm2), corresponding to primary multiplied dark current of 5 fA (63 pA/cm2). The peak responsivity at unity gain is 93 mA/W (external quantum efficiency = 41%) at lambda = 280 nm. The excess noise factor corresponds...
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