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InGaAs/InGaAsP/InP avalanche photodiodes with separate absorption, `grading? and multiplication regions (SAGMAPDs) have been fabricated for the first tune from wafers grown by metalorganic chemical vapour deposition (MOCVD) These APDs exhibit low dark current (? 32 nA at 90% breakdown) and high-speed pulse response (? 100 ps FWHM).
Measurements of the statistical distributions of excess noise as a function of avalanche gain and incident optical power are reported for SAGM avalanche photodiodes. The observed distributions are not Gaussian, but exhibit a `high-side? tail which has consequences for the performance of these APDs in optical receivers.
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