The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We report on gate-last technology for improved effective work function tuning with ∼200meV higher p-EWF at 7Å EOT, ∼2x higher fmax performance, and further options for channel stress enhancement than with gate-first by taking advantage of the intrinsic stress of metals and gate height dependence. Additional key features: 1) scavenging technique yielding UT-EOT down to ∼5Å is demonstrated in gate-last,...
Bias temperature instability of TiN/HfOx/Pt resistive random access memory (ReRAM) device is investigated in this work for the first time. As temperature increases (up to 100°C in this work), it is observed that: (1) leakage current at high resistance state (HRS) increases, which can be explained by the higher density of traps inside dielectrics (related to trap-assistant tunneling), leading to a...
For NiSi FUSI gate transistors, switching behaviors have been observed after breakdown (BD) under certain favorable conditions. The conductive BD path can be ??switched-off?? if a reverse bias, as opposed to the stressing voltage, is applied, a condition required for observing SET and RESET conduction in switching material systems. Using the percolation model of BD of gate dielectric systems, we explain...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.