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In addition to the importance of the geometry of the gate recess trench in high performance 120nm gate length GaAs pseudomorphic high electron mobility transistors (pHEMTs), the recess etch surface condition is also a key parameter. Selective dry etching of the gate recess in a SiCl 4 /SiF 4 /O 2 chemistry uniformly and controllably removes the GaAs cap layer of the device...
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