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Recently, various kinds of extreme exciting conditions, such as the ac-dc hybrid excitation, are applied to transformers, reactors etc. with the development of the HVDC system. The modeling and estimation of stray-field losses are of increasingly importance in the electromagnetic design of such devices, and it is challenging to measurement and numerical analysis.
Spin Transfer Torque Magnetic Random Access Memory (MRAM) possesses a unique combination of high speed, high endurance, non-volatility, and small cell size. Among the emerging new memory technologies, including phase change memory, resistive random access memory, and conductive bridging random access memory, Spin Transfer Torque MRAM is the only candidate with the potential for unlimited endurance,...
The proliferation of distributed generators (DGs) has altered a distribution network from a passive system to an active one. Therefore, power flow originally developed for the passive distribution system needs to account for a DG unit, which can operate either in PV or PQ control mode. Nevertheless, modifications previously proposed can only handle a limited number of PV buses. This paper presents...
Coaxial cable is often used for measurements of antennas inside anechoic chambers. In the measurement of a monopole antenna with a small ground-plane, the finite-sized ground causes the current to flow back from the radiator to the outer surface of the coaxial cable. This results in secondary radiation which introduces errors to the measured radiation pattern. To reduce the unwanted secondary radiation,...
A series of transformer-based benchmark models, referred to as Problem 21 Family, are well established to model stray-field loss generated in the structural components of large power transformers. The configuration of the benchmark family, the engineering background of every member model, and the typical measured and calculated results for each model is presented. The new developments of Problem 21,...
A direct bit transistor access (DBTA) scheme is proposed and implemented in 8 Mb SRAMpsilas at 65 nm and 45 nm nodes. It allows, for the first time, characterization of each bit transistor in a functional SRAM. It thus enables (a) collection of transistor data across bit arrays, (b) collection of massive data for statistical analysis such as on transistor mismatch and NBTI Vt drift, and (c) collection...
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