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The performance of 300 nm, 500 nm and 1 mum metal gate, implant free, enhancement mode III-V MOSFETs are reported. Devices are realised using a 10 nm MBE grown Ga2O3/(GaxGd1-x)2O3 high-kappa (kappa=20) dielectric stack grown upon a delta-doped AlGaAs/InGaAs/AlGaAs/GaAs heterostructure. Enhancement mode operation is maintained across the three reported gate lengths with a reduction in threshold voltage...
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