The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The homoepitaxial growth of 6H- and 4H-SiC on on-axis substrates has been studied in order to demonstrate the growth of thick, mirror-like epitaxial layers without other polytype inclusions and basal plane dislocations. The study was done in a hot wall reactor using standard precursors silane and ethylene with hydrogen chloride (HCl) addition. The main important process parameters were studied, in...
The chlorinated precursor methyltrichlorosilane (MTS), CH 3 SiCl 3 , has been used to grow epitaxial layers of 4H-SiC in a hot wall chemical vapour deposition (CVD) reactor with growth rates higher than 100μm/h. The addition of chlorinated species to the gas mixture prevents silicon nucleation in the gas phase, thus allowing higher input flows of the precursors resulting in much higher...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.