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Homoepitaxial bulk 4H SiC-off-axis commercial wafers were investigated after in situ hydrogen etching on a hot wall chemical vapor deposition (HWCVD).We have performed test etching on several process conditions in order to study the surface defects reduction or transformation. A detailed map of bulk defects has been obtained by optical microscopy inspection to mark interesting position of investigated...
The results of a new epitaxial process using an industrial 6×2″ wafer reactor with the introduction of HCl during the growth have been reported. A complete reduction of silicon nucleation in the gas phase has been observed even for high silicon dilution parameters (Si/H 2 >0.05%) and an increase of the growth rate until about 20μm/h has been measured. Photoluminescence at room temperature...
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