The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this paper, the "three-step model" of photoemission mechanism for gallium nitride (GaN) photocathode is discussed. The first step is the absorption of incidence light. The incidence photon energy is absorbed by the electrons in the valence band, and this establishes the foundation that the electrons in the valence band are stimulated to the conduction band. The second step is the transportation...
Summary form only given. Silicon carbide nanowires with junctions are considered to be of potential value in nanoelectronics. A simple method by catalyst-assisted vapor-liquid-solid reaction for producting Y-junction silicon carbide nanowires is described. The Y-junction silicon carbide nanowires are investigated by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). It...
Summary form only given. Large scale SiC/SiO2 nanowires have been synthesized on Si (100) by the reaction of methane with silica using iron as catalyst. The growth time was 10 mins and the growth temperature was around 1,250°C in a normal atmospheric pressure. Detailed investigation with scanning electron microscopy (SEM), energy-dispersed X-ray (EDX), X-ray diffraction (XRD) and transmission electron...
The traditional corrosion methods based on oxidizing and dissolving can't remove oxygen (O) and carbon (C) on GaN effectively. This is because GaN has stronger chemical stability, the strong oxidation chemical reagent like H2O2 can't oxidize GaN surface. In addition the oxide on GaN surface can't be dissolved effectively by the strong acid solution such as HCl or H2SO4. The depuration method for GaN...
The effects of growth conditions on the morphology of ZnO nanostructures grown by CVD process with Au catalyst were systemically studied and the key factors controlling growth were identified. Two growth modes of ZnO formation were observed: self-catalyzed growth on Si substrate and gas-phase nucleation and growth. In the former case, the ZnO nanostructures grow by the vapor-solid mechanism and the...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.