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High quality, thick (up to 1.1μm), strain relaxed GeSn alloys were grown on Ge-buffered Si (100) in an ASM Epsilon® chemical vapor deposition system using SnCl4 and low-cost commercial GeH4 precursors. The significance of surface chemistry in regards to growth rate and Sn-incorporation is discussed by comparing growth kinetics data in H2 and N2 carrier gas. The role of carrier gas is also explored...
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