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In this paper, we report the liquid-phase epitaxy growth of Hg1 − xCdxTe films from Te-rich solution in a vertical dipping reactor system. X-ray double-crystal diffraction, IR transmittance spectra and Hall measurement are carried out to characterize the quality of epilayers. By optimizing some key growth parameters such as vapour pressure, supercooling, cooling rate and stirring frequency, Hg1 − x...
In this paper, we report the liquid-phase epitaxy growth of Hg1 − xCdxTe films from Te-rich solution in a vertical dipping reactor system. X-ray double-crystal diffraction, IR transmittance spectra and Hall measurement are carried out to characterize the quality of epilayers. By optimizing some key growth parameters such as vapour pressure, supercooling, cooling rate and stirring frequency, Hg1 − x...
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