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3D integration requires vertical stacking of dies while forming permanent electrical and mechanical connections between the input/output pins of the devices. Through silicon via (TSV) is one of the key elements for 3D integration. This paper presents different liner and barrier/seed approaches for realizing 10×100 um void-free copper filled TSVs. Mechanical and electrical performances of these liner...
Semitransparent flexible resistive-switching memory devices, using amorphous InGaZnO as the switching layer, are fabricated on plastic substrates at room temperature. The device shows high performance, excellent flexibility, and mechanical endurance in bending tests. No performance degradation occurs, and the stored information is not lost after bending the device to different angles and up to ...
This paper focuses on the development of maximum wind power extraction strategies for variable speed constant frequency (VSCF) grid-connected wind power generation systems with a doubly fed induction generator (DFIG). A new optimal control method is proposed by controlling the generator stator active and reactive power, which is based on the condition of the system operation for not only the extracted...
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