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Two-dimensional coherent spectroscopy on a series of quantum dot samples with different morphology reveals that biexciton binding is independent of the details of confinement in InAs dots, in contrast to the behavior in GaAs dots.
This paper presents a theoretical investigation on a THz pulse shaping method based on difference frequency generation of two orthogonally polarized optical pulses. This scheme is effective in controlling the amplitude and polarization of generated THz pulse. The power spectrum from ZnTe, GaAs and GaP crystals is compared when considering crystal absorption and phase mismatching condition. Simulation...
Photoconductive semiconductor switches (PCSSs) are considered as promising device s for high power applications. Since picosecond optoelectronic switching in silicon was published in 1975, especially from 1977, in which Si was replaced by GaAs, PCSSs have been significantly used in pulsed power technology, such as high-power ultra wideband microwave source and compact pulsed power generator. Since...
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