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4H-SiC epilayers grown on 4° off-axis substrates at high rates usually suffer from step-bunching (very high surface roughness) or of extended triangular defects, both detrimental for device performance.In this study we developed a novel in situ pre-growth surface preparation based on hydrogen chloride (HCl) addition at a temperature higher than that used for the growth. This pre-growth etching procedure...
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