The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
K 0.5 Na 0.5 NbO 3 thin films were prepared on Pt/Ti/SiO 2 /Si substrates by chemical solution deposition method with different annealing temperatures of 550°C, 600°C, 700°C. The post-annealing treatment was introduced at 550°C for 3min in oxygen ambient. It is found that the films were composed of pure provskite phase, and the post-annealing treatment promoted the...
Effects of lanthanum (La) substitution (0.003≤x≤0.015) on the dielectric and ferroelectric properties of Pb(Zr 0.5 Ti 0.5 )O 3 thin films have been investigated. The films were synthesized on the Pt (111)/Ti/SiO 2 /Si (100) substrates by a sol–gel method. Large dielectric constants of the films are obtained within range of 800–1600 which are almost comparable to those...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.