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The challenge to effectively and accurately determine pure partial discharge (PD) signals from the large amount of noise still remains. In this study, individual PD pulses were filtered, extracted and analyzed using digital signal processing techniques and data mining methods. The shape or distribution of the spectral frequency domain could be correlated with different PD signals. Feature extraction...
Partial discharge (PD) detection has been used in assessment of condition reliability of electrical insulation in high voltage equipment such as power station. Unfortunately, PD signals took during condition monitoring are often corrupted with excessive interference. The challenge to effectively and accurately determine and extract the pure PD signal from the large amount of noise still remains. The...
How can a metal-oxide-semiconductor (MOS) transistor suffer from multiple dielectric breakdowns (BD) with severe structural damages (e.g., local melting and metal migration) remain functional? Our results show that the amorphization of Si in the vicinity of the BD forms an effective p-n diode which prevents terminal short from happening when reverse-biased.
In conclusion, this paper reports a number of significant developments in III-V MOSFET devices. Retaining a subthreshold slope of 60-70 mV/decade for gate lengths down to 100 nm with an EOT of 3.4 nm shows for the first time that the flatband mode device architecture is tolerant to short channel effects. In addition, a generic silicon compatible process flow for the realization of fully self-aligned...
In this paper, we propose a new selective pinning strategy, the BC-based pinning strategy, to control a complex network, i.e., placing the local feedback controllers on the vertices with high betweenness centrality (BC). To verify that the stabilizability bounds of a network depend on not only degrees of the pinned vertices, but also the distance between the pinned vertex set and the unpinned vertex...
STEM/EELS were used to probe the localized electronic structures of the defective oxide. Our results show that the electronic structures of breakdown oxide are similar to the oxygen deficient suboxide with formation of oxygen vacancies. The understanding of the basic material properties will be helpful for the improvements of the state-of-the-art devices.
In this paper, we study the problem of recognizing an unknown probability density function from one of its sample which is of interest in signal and image processing or telecommunication applications. By opposition with the classical Kolmogorov-Smirnov method based on empirical cumulative functions, we consider histogram estimators of the density itself built from our data. Those histograms are generated...
We present an improved procedure for extracting parasitic capacitance parameters and gate current parameters for MOSVAR, the industry standard MOS varactormodel. Our technique is verified against measured data from three technology nodes (180 nm, 130 nm and 65 nm), and is also used to validate the MOSVAR P-gate/P-well tunneling current sub-model.
Based on the combination of the genetic and Levenberg-Marquardt algorithms, a new method is developed to perform both local and global parameter extraction for the PSP MOSFET model. It has been successfully used to extract parameter sets for a 65-nm technology node. Numerical examples demonstrate its ability to obtain highly accurate model parameter values without excessive computational cost.
Using scanning transmission electron microscope with high resolution electron energy loss spectroscopy, the chemical nature of the percolation path formed in ultrathin SiON layers is studied for digital and analog breakdown (BD). Our results show that the diameter of the percolation path dilates from 30 nm to 55 nm as the gate leakage current increases from 2 muA to 40 muA. Oxygen deficiency in the...
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