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Enhanced photoluminescence emission from higher subbands of nanopore lattices compared to a quantum well is presented. Increasing pore diameter enhances the excited state emission implying reduced intersubband scattering rate, consistent with theoretical calculations.
This study demonstrates the use of electronically coupled patterned quantum dots (QDs) fabricated using a wet-etching technique as the gain medium of a photonic device. This technique provides the unique ability to control both the spatial and spectral properties of QDs, while maintaining the high optical quality of the material necessary for photonics applications.
The performance of 300 nm, 500 nm and 1 mum metal gate, implant free, enhancement mode III-V MOSFETs are reported. Devices are realised using a 10 nm MBE grown Ga2O3/(GaxGd1-x)2O3 high-kappa (kappa=20) dielectric stack grown upon a delta-doped AlGaAs/InGaAs/AlGaAs/GaAs heterostructure. Enhancement mode operation is maintained across the three reported gate lengths with a reduction in threshold voltage...
Generation behaviors at normal pressures and reactions of the oxygen radical anion (O- ion) have been studied. Highly concentrated O- ions which are encaged by a microporous crystal 12CaO · 7Al2O3 (C12A7) are emitted in the atmosphere with N2 gas at 975K or more and the emission speed is up to 1.7*10-7 mol/(s*m2). Emitted O- ions are easy to dissolve ion-exchanged water and it can make acidic water...
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