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THz coplanar waveguides were fabricated on quartz wafers with integrated epitaxially transferred low temperature grown gallium arsenide photoconductive switches. THz radiation was excited on-chip and transmitted through a tapering of the coplanar waveguide structure where it was focused down to ∼ 1.66μm. Theoretical modelling of the device confirms high E-field confinement and concentration.
A microwave lens implemented using multi-layer substrates is proposed for antenna gain enhancement. The microwave lens proposed is composed of 11 layers of parallel substrates. A 3D-patch antenna designed to operate in the frequency band from 8 to 9 GHz (S11<−10 dB) is used for studying the microwave lens. Dual-feeding is used in the patch antenna to reduce cross polarization. For gain enhancement,...
Complex patterns formed by an array of micrometer spots can be transferred onto a silicon wafer using a one-step noncontact pattern transfer method by dc plasma immersion ion implantation. The transferred images can be demagnified or magnified by placing a metal ring in contact with the metal mask (demagnification) or sample (magnification). Scanning electron microscopy reveals that the center to...
Gold nanoparticle arrays are fabricated for surface-enhanced Raman scattering (SERS) and the effect of experimental parameters such as annealing temperature and array thickness of nanoparticles on the SERS signals are investigated. The particle distribution and particle size are dense and uniform on the glass substrate when the 10nm gold film was annealed at 270 ºC and strong SERS signals for Rhodamine...
For the application of field emission (FE), W18O49 nanostructures have exhibited excellent FE behaviors among tungsten oxides, which promise a much better future. However, many difficulties remain to be overcome in their application in devices. One of them is that synthesis of nanostructures in uniform W18O49 phase is difficult; tungsten oxides have tens of different phases, which can results in their...
150 mm Silicon-on-polycrystalline-Silicon Carbide (poly-SiC) hybrid substrates, without intermediate oxide layers have been realized by hydrophilic wafer bonding of SOI- and poly-SiC wafers. A novel rapid thermal treatment step has been introduced before furnace annealing to avoid bubble formation, cracks and breakage. The final substrates are shown to be stress-free. Electrical and thermal characterization...
Stability of materials is of great technical importance for materials to be applied technologically. In this paper, a novel material-amorphous composite films of titanium and vanadium oxides films, which may have a very promising industrial application, were obtained by reactive dc magnetron co-sputtering deposition. The dependence of thermal resistance and square resistance stability of the samples...
Internally-matched 4H-SiC MESFET with 4times20 mm of the total gate width was demonstrated. The SiC MESFET structure consists of a channel layer with doping concentration of 2.3times1017 cm-3 and a cap layer with doping concentration of 1.5times1019 cm-3. A lightly p-doped buffer layer was employed between the substrate and the channel layer. Dry etching and high-temperature oxidation were employed...
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