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We present results on chloride-based homoepitaxial growth of 4H-SiC in a hot wall CVD reactor. The addition of chlorinated species to the gas mixture prevents silicon nucleation in the gas phase, thus allowing higher input flows of the precursors resulting in much higher growth rate than that of standard SiC epitaxial growth using only silane, SiH 4 , and ethylene, C 2 H 4 ...
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