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Junction leakage is becoming an important reliability concern as shallow trench isolation (STI) continues to scale down. This junction leakage has to be considered to improve SRAM Vccmin degradation. The major index of junction leakage in SRAM cell is found to be off-state leakage current as the leakage phenomenon externally manifests as a current flow from butted contact (BCT) to lower pull down...
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