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The DC characteristics of InGaAs-InP single heterojunction bipolar transistors (SHBTs) were studied for the first time under high energy (/spl sim/1 MeV) electron radiation with a cumulative dose up to 5.4/spl times/10/sup 15/ electrons/cm/sup 2/. The following degradation effects were observed for electron doses greater than 10/sup 15//cm/sup 2/: (1) decrease in collector current, (2) decrease in...
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