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The quasi-planar segmented-channel MOSFET (SegFET) design provides an evolutionary pathway for continued CMOS technology scaling, and can be fabricated using a conventional process flow starting with a corrugated substrate. It has been shown previously that the SegFET exhibits better short channel behavior compared to the conventional MOSFET. Recently, we have demonstrated further performance enhancement...
Ultra-high-vacuum (UHV) deposited Ga2O3(Gd2O3) [GGO] has been employed for passivating InGaAs and Ge, without using any interfacial paissivation layers (IPLs). The GGO/InGaAs and /Ge metal-oxide-semiconductor capacitors (MOSCAPs) have exhibited low capacitance-equivalent-thickness (CET) of less than 1nm in GGO, low interfacial densities of states (Dit's) ~ 1011eV-1cm-2, and thermal stability at high...
Self-aligned inversion-channel In0.53Ga0.47As n-MOSFETs with ex-situ atomic-layer-deposited Al2O3 and in-situ ultra-high-vacuum deposited Al2O3/Ga2O3(Gd2O3) as gate dielectrics have been demonstrated. Both devices exhibit excellent DC characteristics, including high drain currents and transconductances. In addition, RF characteristics of both devices were analyzed; without using any isolation, non...
The authors have successfully demonstrated self-aligned high-performance inversion-channel In0.53Ga0.47As MOSFETs using UHV-deposited nano-meter thick AI2O3/GGO dual-layer dielectrics and a TiN metal gate. Record-high drain current and transconductance, despite its challenging process, were achieved. Ring gate D-mode In0.2Ga0.8As MOSFETs using as a similar dual layer gate dielectric also exhibits...
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