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A wafer-level-packaging technology was used to integrate the 0.1 mum AlSb/InAs HEMT low-noise amplifiers with power amplifiers, switches and phase shifters to form a compact tri-stack transmit/receive module for light-weight and ultralow-power applications. The high manufacturability of AlSb/InAs HEMT receivers operating at 0.9 mW was demonstrated on a tri-stack wafer. This demonstration of manufacturable...
This paper presents an ultra-compact W-band 4-bit phase shifter integrated in a 5-layer wafer-scale assembly phased array system. The phase shifter was implemented using a reflective-type circuit topology, consisting of a 3 dB Lange coupler and a pair of reflective loads. GaAs HEMT switches were used for switching the loads to achieve the desired phase shifts. On-wafer measurements of the single-bit...
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