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In this paper, we report the preparation of nanocrystalline ZnO thin films on Si (100) substrates using a simple method, in which a resistive thermal evaporation of Zn and a two-step annealing process were employed. The aim of the first annealing step in an oxygen ambient at 300 o C for 2h is to form ZnO layers on the surface of the Zn films to prevent the diffusion of the metallic Zn from...
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