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Growth and photoluminescence (PL) spectra of undoped and N-doped ZnO grown on 6H-SiC substrate by plasma-assisted molecular beam epitaxy (P-MBE) method were especially studied. Compared with PL spectrum of undoped ZnO, a broadening of near-band-edge (NBE) emission was observed in N-doped samples at room temperature. The low-temperature (5K) PL spectrum confirmed that some acceptor levels associated...
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