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Al-doped CsLiB6O10 crystals were grown by the top-seeded solution growth method in large sizes with good optical quality. We reveal for the first time that these crystals exhibit outstanding UV-induced damage resistant performance.
We constructed a laser scanning terahertz (THz) imaging system for high-speed imaging by using a galvano scanner and an organic nonlinear optical crystal, DASC, as a two-dimensional THz emitter. Using this system, we succeeded in obtaining high-resolution THz images of a test sample.
By exciting with sub-10-fs 1.6-µm pulses the quasi-one-dimensional Mott insulator ET-F2TCNQ, we observe prompt collapse of the Mott gap modulated by 24-THz oscillations of the gap, which are assigned to quantum interference between holon-doublon excitations.
Dynamic Q factor control of a two-dimensional photonic crystal double heterostructure nanocavity is demonstrated. The dynamic Q range is found to be from 56,000 to 150,000 by time domain measurement and pulse trapping is successfully realized.
We have studied THz detection performance of low-temperature-grown GaAs (LT-GaAs) photoconductive switches gated with 1560-nm-optical pulses. LT-GaAs is annealed in the range of 500-600degC. Although the sample annealed at 600degC is most sensitive at frequencies below 1 THz, that annealed at 550degC is superior to others at higher frequencies than 1 THz.
3 dB of measured squeezing is reported for pulsed 1550-nm light generated by down-conversion in bulk PPLN. Using different pump focuses, single- and coincidence-counts in agreement with both thermal and Poissonian photon-pair distributions were obtained.
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